Manufacturer Part Number
STD140N6F7
Manufacturer
STMicroelectronics
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
Continuous Drain Current (Tc) of 80A
Very low on-resistance of 3.8mΩ @ 40A, 10V
Wide operating temperature range of -55°C to 175°C
High voltage handling capability up to 60V
Low input capacitance of 3100pF
Maximum Power Dissipation of 134W
Product Advantages
Excellent thermal performance
High efficiency
Compact and space-saving DPAK package
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.8mΩ @ 40A, 10V
Continuous Drain Current (Tc): 80A
Input Capacitance (Ciss): 3100pF @ 30V
Power Dissipation (Tc): 134W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Can be used in a wide range of high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and automotive applications
Product Lifecycle
Currently in production. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent thermal performance and efficiency
Compact DPAK package
Wide operating temperature range
High power handling capability
Suitable for high-power switching applications
STD13NM60N MOSSTMicroelectronics
STD1501-ADJM-TRGSEMTRON