Manufacturer Part Number
STD13N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package
Part of the MDmesh II Plus series
Product Features and Performance
Drain-Source Voltage (Vdss) of 600V
Gate-Source Voltage (Vgs) max of ±25V
On-Resistance (Rds(on)) of 380mΩ @ 5.5A, 10V
Continuous Drain Current (Id) of 11A at 25°C
Input Capacitance (Ciss) of 580pF @ 100V
Power Dissipation (Tc) of 110W
N-Channel MOSFET with DPAK package
Product Advantages
High breakdown voltage for improved reliability
Low on-resistance for low conduction losses
Compact DPAK surface-mount package
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 380mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Input Capacitance (Ciss): 580pF @ 100V
Power Dissipation (Tc): 110W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available within the MDmesh II Plus series
Key Reasons to Choose This Product
High breakdown voltage for improved reliability
Low on-resistance for high efficiency
Compact DPAK package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS3 compliance and AEC-Q101 qualification for quality and safety
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