Manufacturer Part Number
STD13NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
600V drain-source voltage
380mΩ on-resistance
11A continuous drain current
845pF input capacitance
5nC gate charge
Operates up to 150°C junction temperature
Product Advantages
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Robust design for reliable operation
Key Technical Parameters
Drain-source voltage: 600V
Maximum gate-source voltage: ±25V
On-resistance: 380mΩ
Continuous drain current: 11A
Input capacitance: 845pF
Power dissipation: 109W
Quality and Safety Features
RoHS3 compliant
DPAK package for improved thermal performance
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Electric vehicles
Industrial automation
Product Lifecycle
Currently in production
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose
Excellent performance-to-cost ratio
Robust and reliable design
Broad compatibility for various power applications
Readily available from a trusted manufacturer