Manufacturer Part Number
STD150N3LLH6
Manufacturer
STMicroelectronics
Introduction
High-power N-channel MOSFET transistor with enhanced DeepGATE technology for high-efficiency power conversion applications.
Product Features and Performance
High-power handling capability up to 80A continuous drain current
Low on-resistance down to 2.8mΩ for improved efficiency
Fast switching with low gate charge of 29nC
Wide operating temperature range up to 175°C
Compatible with 4.5V and 10V gate drive voltages
Product Advantages
Efficient power conversion due to low conduction and switching losses
Improved system reliability and longevity with high-temperature operation
Flexible gate drive voltage options for design optimization
Compact DPAK package for space-saving board layouts
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 2.8mΩ
Drain Current (Id): 80A
Input Capacitance (Ciss): 3700pF
Power Dissipation (Tc): 110W
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Robust DPAK package for high reliability
Compatibility
Suitable for a wide range of high-power, high-efficiency applications such as:
Power supplies
Motor drives
Inverters
Industrial automation
Renewable energy systems
Application Areas
High-power, high-efficiency power conversion
Industrial and automotive electronics
Renewable energy systems
Motor control applications
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Exceptional power handling and efficiency due to low on-resistance and fast switching
Reliable high-temperature operation up to 175°C
Flexible gate drive voltage options for design optimization
Compact DPAK package for space-saving layouts
RoHS3 compliance for environmental responsibility
Proven reliability and performance in a wide range of high-power applications
STD15ASTD