Manufacturer Part Number
FQN1N60CTA
Manufacturer
onsemi
Introduction
N-channel enhancement-mode field-effect transistor (FET)
Designed for use in general-purpose switching and amplifier applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 600V
Continuous drain current (Id) of 300mA at 25°C
On-state resistance (Rds(on)) of 11.5Ω at 150mA, 10V
Input capacitance (Ciss) of 170pF at 25V
Power dissipation of 1W at Ta, 3W at Tc
Operating temperature range of -55°C to 150°C
Product Advantages
High voltage capability
Low on-state resistance
Suitable for general-purpose switching and amplifier applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs) (max): ±30V
Threshold voltage (Vgs(th)) (max): 4V at 250μA
Drive voltage (max Rds(on), min Rds(on)): 10V
Gate charge (Qg) (max): 6.2nC at 10V
Quality and Safety Features
RoHS3 compliant
Meets quality and safety standards for general-purpose electronics applications
Compatibility
Suitable for through-hole mounting
Compatible with TO-92-3 and TO-226-3 (TO-226AA) package types
Application Areas
General-purpose switching and amplifier applications
Power supply and control circuits
Industrial and consumer electronics
Product Lifecycle
Current production, no discontinuation planned
Replacement or upgrade parts available if needed
Key Reasons to Choose This Product
High voltage capability for a wide range of applications
Low on-state resistance for efficient power switching
Suitable for general-purpose electronics applications
RoHS3 compliance for environmental responsibility
Availability of compatible package types and replacement parts