FQN1N50CTA - onsemi

Manufacturer Part Number

FQN1N50CTA

Manufacturer

onsemi

Introduction

N-channel enhancement mode MOSFET transistor

Part of the QFET series

Product Features and Performance

Drain to Source Voltage (Vdss) of 500 V

Maximum Gate-Source Voltage (Vgs) of ±30 V

On-State Resistance (Rds(on)) of 6 Ω @ 190 mA, 10 V

Continuous Drain Current (Id) of 380 mA @ 25°C

Input Capacitance (Ciss) of 195 pF @ 25 V

Power Dissipation of 890 mW (Ta), 2.08 W (Tc)

Operating Temperature range of -55°C to 150°C

Product Advantages

High voltage handling capability

Low on-state resistance

Suitable for high power applications

Key Technical Parameters

MOSFET Technology

N-Channel Enhancement Mode

TO-92-3 Package

Quality and Safety Features

RoHS3 Compliant

Formed Leads for Through Hole Mounting

Compatibility

TO-92-3 and TO-226-3 (TO-226AA) Packages

Application Areas

Industrial equipment

Power supplies

Motor control

Lighting systems

Product Lifecycle

This product is actively available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent high voltage handling capability up to 500 V

Low on-state resistance for efficient power switching

Compact and versatile TO-92-3 package

Suitable for a wide range of industrial and power management applications

Reliable performance within the -55°C to 150°C temperature range