Manufacturer Part Number
NTMFS6H801NT1G
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET with low on-resistance and fast switching speed, suitable for a wide range of power management and switching applications.
Product Features and Performance
Low on-resistance (Rds(on) max. 2.8 mΩ @ 50 A, 10 V)
High current capability (continuous drain current up to 157 A at Tc = 25°C)
Fast switching speed
Low gate charge (Qg max. 64 nC @ 10 V)
Wide operating temperature range (-55°C to 175°C)
Optimized for high-efficiency power conversion and control
Product Advantages
Excellent performance-to-cost ratio
Suitable for high-power, high-frequency switching applications
Robust and reliable design
Compact and space-saving package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 2.8 mΩ @ 50 A, 10 V
Continuous Drain Current (Id): 23 A (Ta), 157 A (Tc)
Input Capacitance (Ciss): 4120 pF @ 40 V
Power Dissipation (Pd): 3.8 W (Ta), 166 W (Tc)
Threshold Voltage (Vgs(th)): 4 V @ 250 A
Drive Voltage: 6 V (max Rds(on)), 10 V (min Rds(on))
Gate Charge (Qg): 64 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for high-stress applications
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Lighting and LED drivers
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Suitable for high-power, high-frequency switching applications
Robust and reliable design
Compact and space-saving package
Wide operating temperature range
Fast switching speed and low gate charge for high-efficiency power conversion
Proven track record and technical support from onsemi
