Manufacturer Part Number
NTMFS6H800NT1G
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET with low on-resistance and high current handling capability
Product Features and Performance
Low on-resistance of 2.1 mΩ at 50 A, 10 V
High continuous drain current rating of 28 A at 25°C ambient temperature
Very high pulsed drain current rating of 203 A
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 5,530 pF at 40 V
Product Advantages
Excellent power handling and efficiency
Suitable for high-current, high-power switching applications
Optimal for DC-DC converters, motor drives, and power inverters
Key Technical Parameters
Drain-Source Voltage (Vdss): 80 V
Gate-Source Voltage (Vgs): ±20 V
Power Dissipation (Max): 3.8 W (Ta), 200 W (Tc)
Gate Charge (Qg): 85 nC at 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of electronic systems and power supplies
Application Areas
DC-DC converters
Motor drives
Power inverters
High-current, high-power switching applications
Product Lifecycle
Currently available, no known plans for discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent power handling and efficiency
High current capability with low on-resistance
Wide operating temperature range
Suitable for high-reliability applications
Compatibility with a wide range of electronic systems
