Manufacturer Part Number
NTMFS6B03NT1G
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET designed for high-frequency, high-efficiency power conversion applications
Product Features and Performance
Optimized for high-frequency switching with low gate charge and high-speed capabilities
Low on-resistance (RDS(on)) for low conduction losses
Low gate charge (Qg) for high-speed and high-efficiency switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance with high power dissipation capability
Robust and reliable design for demanding applications
Optimized for high-frequency switching in power conversion circuits
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 4.8mΩ @ 20A, 10V
Continuous Drain Current (ID): 19A (Ta), 132A (Tc)
Input Capacitance (Ciss): 4200pF @ 50V
Power Dissipation (PD): 3.4W (Ta), 165W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability and high-quality applications
Compatibility
Designed for surface mount assembly
Compatible with various power conversion and control circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Currently available, no discontinuation plans identified
Replacements and upgrades may be available from the manufacturer
Several Key Reasons to Choose This Product
Excellent switching performance and efficiency for high-frequency power conversion
Robust and reliable design for demanding applications
Wide operating temperature range and high power dissipation capability
RoHS3 compliance for use in various applications
Compatibility with surface mount assembly and power conversion circuits