Manufacturer Part Number
NTMFS5C646NLT1G
Manufacturer
onsemi
Introduction
High power density N-Channel MOSFET with low on-resistance and fast switching speed
Product Features and Performance
Very low on-resistance of 4.7 mOhm
Continuous drain current of 19A at 25°C
Operating temperature range of -55°C to 175°C
Input capacitance of 2164 pF at 25V
Maximum power dissipation of 3.7W at 25°C and 79W at case temperature
Product Advantages
Excellent thermal performance
Fast switching speed
High power density
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate to Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 4.7 mOhm @ 50A, 10V
Threshold Voltage (Vgs(th)): 2V @ 250A
Input Capacitance (Ciss): 2164 pF @ 25V
Gate Charge (Qg): 33.7 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Meets industrial and automotive standards
Compatibility
Compatible with a wide range of electronic devices and circuits
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent thermal performance and power density
Fast switching speed for efficient power conversion
Reliable and robust design for industrial and automotive applications
Wide operating temperature range
RoHS3 compliance for environmental sustainability