Manufacturer Part Number
NTMFS5H414NLT1G
Manufacturer
onsemi
Introduction
High-performance, surface-mount N-channel MOSFET transistor with low on-resistance and high current handling capability.
Product Features and Performance
40V drain-source voltage rating
4mΩ maximum on-resistance at 20A, 10V gate-source voltage
35A continuous drain current at 25°C ambient temperature
210A continuous drain current at 25°C case temperature
4550pF maximum input capacitance at 20V drain-source voltage
1W maximum power dissipation at 25°C ambient temperature
110W maximum power dissipation at 25°C case temperature
Product Advantages
Excellent power-to-size ratio
Low on-resistance for efficient power conversion
High current handling capability
Small, surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.4mΩ @ 20A, 10V
Continuous Drain Current (Id): 35A (Ta), 210A (Tc)
Input Capacitance (Ciss): 4550pF @ 20V
Power Dissipation: 3.1W (Ta), 110W (Tc)
Gate Threshold Voltage (Vgs(th)): 2V @ 250A
Gate Charge (Qg): 75nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed for reliable, high-performance power switching applications
Compatibility
Can be used as a direct replacement for similar N-channel MOSFET transistors in power conversion and control circuits
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Power amplifiers
Industrial and automotive power electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options may be available from onsemi or other manufacturers
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Compact, surface-mount package for space-constrained designs
Reliable performance over a wide temperature range (-55°C to 150°C)
Proven track record of use in high-performance power electronics applications
Available from a reputable semiconductor manufacturer, onsemi
