SIHB22N60ET1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIHB22N60ET1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-voltage, high-current, N-channel power MOSFET in a DPAK (TO-263) package

Product Features and Performance

High voltage rating of 600V

Low on-resistance of 180mΩ @ 11A, 10V

High continuous drain current of 21A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 1920pF @ 100V

High power dissipation of 227W at 25°C

Product Advantages

Excellent performance for high-power, high-voltage applications

Compact DPAK (TO-263) package for efficient heat dissipation

Suitable for a variety of switching and power conversion applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 180mΩ @ 11A, 10V

Continuous Drain Current (Id): 21A @ 25°C

Input Capacitance (Ciss): 1920pF @ 100V

Power Dissipation (Pd): 227W @ 25°C

Quality and Safety Features

Manufactured using Vishay's advanced MOSFET technology

Designed for reliable and safe operation in high-power applications

Compatibility

Suitable for a wide range of switching and power conversion applications, including industrial, automotive, and consumer electronics

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and available for purchase

Replacements or upgrades may be available in the future as technology advances

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Compact and efficient DPAK (TO-263) package

Wide operating temperature range for versatile applications

Reliable and safe performance backed by Vishay's advanced MOSFET technology