SIHB25N50E-GE3 - Vishay Siliconix

Manufacturer Part Number

SIHB25N50E-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET with low on-resistance and high-speed switching performance.

Product Features and Performance

Very low on-resistance for high efficiency

High-speed switching for improved efficiency in power conversion applications

Capable of handling high drain currents and voltages

Low gate charge for improved drive efficiency

Product Advantages

Excellent thermal performance and power handling capability

High reliability and ruggedness

Suitable for a wide range of power conversion and control applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 500 V

Maximum Gate-to-Source Voltage (Vgs): ±30 V

On-Resistance (Rds(on)): 145 mΩ @ 12 A, 10 V

Continuous Drain Current (Id): 26 A @ 25°C

Input Capacitance (Ciss): 1980 pF @ 100 V

Power Dissipation (Tc): 250 W

Quality and Safety Features

Meets high-reliability standards for critical applications

Robust design for enhanced safety and protection

Compatibility

Compatible with a wide range of power electronics and control systems

Application Areas

Power supplies

Motor drives

Inverters and converters

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Exceptional performance and efficiency in power conversion applications

High reliability and ruggedness for demanding industrial and automotive environments

Versatile and compatible with a wide range of power electronics systems

Backed by the technical expertise and quality standards of Vishay / Siliconix