Manufacturer Part Number
SIHB16N50C-E3
Manufacturer
Vishay / Siliconix
Introduction
High-voltage N-channel power MOSFET
Product Features and Performance
500V drain-source voltage rating
16A continuous drain current rating at 25°C
380mΩ maximum on-resistance at 8A, 10V
High-speed switching
Low gate charge
Low input capacitance
Product Advantages
Suitable for high-voltage, high-power applications
Efficient power conversion and control
Improved system efficiency and power density
Key Technical Parameters
Drain-source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 380mΩ at 8A, 10V
Continuous drain current (Id): 16A at 25°C
Input capacitance (Ciss): 1900pF at 25V
Power dissipation (Pd): 250W at Tc
Quality and Safety Features
RoHS3 compliant
Reliable performance over wide temperature range (-55°C to 150°C)
Compatibility
Compatible with standard MOSFET gate drive circuits
Suitable for various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Inverters
High-voltage power conversion
Product Lifecycle
Currently in production
Replacements and upgrades available from Vishay/Siliconix
Key Reasons to Choose This Product
High-voltage and high-current capability
Low on-resistance for efficient power conversion
Fast switching performance
Reliable operation over wide temperature range
RoHS3 compliance for environmentally-friendly design
SIHB23N60E-GE3Vishay