Manufacturer Part Number
SIHB10N40D-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIHB10N40D-GE3 is a high-performance N-channel power MOSFET from Vishay Siliconix, designed for a wide range of power conversion and control applications.
Product Features and Performance
High drain-to-source voltage of 400V
Low on-resistance of 600mΩ at 5A and 10V
High continuous drain current of 10A at 25°C
Fast switching with low gate charge of 30nC at 10V
Wide operating temperature range of -55°C to 150°C
Surface-mount DPAK (TO-263) package
Product Advantages
Excellent performance for power conversion and control applications
Compact and efficient surface-mount package
Reliable and robust design for harsh environments
RoHS compliant for environmentally-friendly use
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 400V
Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 10A at 25°C
On-Resistance (Rds(on)): 600mΩ at 5A, 10V
Input Capacitance (Ciss): 526pF at 100V
Power Dissipation (Tc): 147W
Quality and Safety Features
RoHS3 compliant
Operates within a wide temperature range of -55°C to 150°C
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Currently in production
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Fast switching performance for high-frequency applications
Reliable and robust design for harsh environments
Compact surface-mount package for space-constrained designs
RoHS compliance for environmentally-friendly use