Manufacturer Part Number
SIHB12N60E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
600V drain-to-source voltage
12A continuous drain current at 25°C
380mΩ maximum on-resistance at 6A, 10V
937pF maximum input capacitance at 100V
147W maximum power dissipation at Tc
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for high efficiency
High voltage and current handling capability
Compact DPAK (TO-263) surface mount package
Key Technical Parameters
N-channel MOSFET technology
±30V maximum gate-to-source voltage
4V maximum gate threshold voltage at 250A
58nC maximum gate charge at 10V
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for reliable surface mount assembly
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Lighting and HVAC systems
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade parts available as needed
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact and reliable DPAK (TO-263) package
Wide operating temperature range
RoHS3 compliance for use in various applications