Manufacturer Part Number
SIHA22N60E-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel power MOSFET with low on-resistance and fast switching speed.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 600V
Very low on-resistance (Rds(on)) of 180mΩ @ 11A, 10V
Continuous Drain Current (Id) of 21A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed with low gate charge (Qg) of 86nC @ 10V
Robust design with high Power Dissipation (Ptot) of 35W
Product Advantages
Excellent efficiency and low power loss
Reliable and rugged performance
Suitable for high-voltage, high-current applications
Easy to drive with 10V gate voltage
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-resistance (Rds(on)): 180mΩ @ 11A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 1920pF @ 100V
Power Dissipation (Ptot): 35W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with -55°C to 150°C operating temperature range
Compatibility
Through-hole mounting in TO-220 package
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent efficiency and low power loss due to low on-resistance
Reliable and robust performance for high-voltage, high-current applications
Easy to drive with 10V gate voltage
Wide operating temperature range suitable for harsh environments
Suitable for a variety of power electronics applications