Manufacturer Part Number
SIHA12N60E-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Power MOSFET Transistor
Product Features and Performance
N-Channel MOSFET Transistor
600V Drain-Source Voltage
12A Continuous Drain Current
380mΩ On-Resistance
33W Power Dissipation
Wide Operating Temperature Range: -55°C to 150°C
Low Gate Charge, High Switching Speed
Product Advantages
Excellent power handling capabilities
High voltage and current rating
Low on-resistance for efficient power conversion
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mΩ @ 6A, 10V
Drain Current (Id): 12A (Tc)
Input Capacitance (Ciss): 937pF @ 100V
Gate Charge (Qg): 58nC @ 10V
Quality and Safety Features
RoHS3 Compliant
TO-220 Full Pack Package
Reliable high-quality construction
Compatibility
Universal compatibility with various power electronics and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching power converters
Industrial control and automation
Product Lifecycle
Current production model
No known discontinuation plans
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Wide operating voltage and temperature range
Reliable and durable construction
Suitable for a broad range of power electronics applications
Available in a common and versatile package