Manufacturer Part Number
SIHB33N60EF-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-voltage, high-current N-channel power MOSFET
Product Features and Performance
High voltage rating of 600V
High continuous drain current of 33A
Low on-resistance of 98mΩ
Fast switching and low gate charge
Wide temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Robust and reliable performance
Suitable for high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 98mΩ
Continuous Drain Current (Id): 33A
Input Capacitance (Ciss): 3454pF
Power Dissipation (Tc): 278W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Surface mount package (TO-263, DPAK)
Application Areas
Switching power supplies
Motor drives
Industrial and high-power electronics
Product Lifecycle
Currently available
No known discontinuation plans
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Fast switching and low gate charge for high-speed operation
Robust design for reliable performance in harsh environments
Compatibility with standard surface mount packages