SIHB33N60ET1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIHB33N60ET1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-efficiency n-channel power MOSFET with low on-resistance and fast switching

Product Features and Performance

High Drain-Source Voltage: 600V

Low On-Resistance: 99mΩ at 16.5A, 10V

High Continuous Drain Current: 33A at 25°C

High Power Dissipation: 278W at Tc

Wide Temperature Range: -55°C to 150°C

Fast Switching Speed

High Input Capacitance: 3508pF at 100V

Product Advantages

Excellent performance for high-efficiency power conversion

Suitable for high-voltage, high-current applications

Robust design for reliable operation

Key Technical Parameters

Drain-Source Voltage (Vdss): 600V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 99mΩ at 16.5A, 10V

Continuous Drain Current (Id): 33A at 25°C

Power Dissipation (Pd): 278W at Tc

Input Capacitance (Ciss): 3508pF at 100V

Gate Charge (Qg): 150nC at 10V

Quality and Safety Features

Robust MOSFET design for high reliability

Meets strict safety and quality standards

Compatibility

Suitable for a wide range of high-voltage, high-current power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

High-voltage DC-DC converters

Industrial and consumer electronics

Product Lifecycle

Current production model, not nearing discontinuation

Replacements and upgrades available from Vishay/Siliconix

Key Reasons to Choose This Product

Excellent performance in high-efficiency, high-power applications

Robust and reliable design for long-term operation

Wide range of compatible applications

Availability of replacements and upgrades from the manufacturer