Manufacturer Part Number
SIHD7N60E-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a high-performance, surface-mount N-channel MOSFET transistor in a D-Pak package.
Product Features and Performance
High voltage rating of 600V drain-to-source
Low on-resistance of 600mΩ at 3.5A, 10V
High current rating of 7A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 680pF at 100V
High power dissipation of 78W at Tc
Product Advantages
Efficient power switching and control
Robust design for high-voltage applications
Compact and space-saving surface-mount package
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
Drain Current (Id): 7A continuous at 25°C
On-Resistance (Rds(on)): 600mΩ at 3.5A, 10V
Input Capacitance (Ciss): 680pF at 100V
Power Dissipation (Pd): 78W at Tc
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and systems that require high-voltage, high-current switching and control.
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current applications
Robust and reliable design for harsh environments
Efficient power switching and control
Compact and space-saving surface-mount package
Wide operating temperature range and high power dissipation
RoHS3 compliance for environmental responsibility
SIHD5N50D D5N50DElectro-Films (EFI) / Vishay