SIHD180N60E-GE3 - Vishay Siliconix

Manufacturer Part Number

SIHD180N60E-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-voltage, high-current N-channel power MOSFET with very low on-resistance, designed for high-efficiency power supply and motor drive applications.

Product Features and Performance

Very low on-resistance (RDS(on) max 195 mΩ) for high efficiency

High drain-source voltage (600 V) for high-voltage applications

High current capability (19 A continuous at 25°C) for high-power applications

Fast switching speed for high-frequency operation

Low gate charge (32 nC max) for high-frequency and high-efficiency switching

Excellent avalanche capability for rugged operation

Product Advantages

Optimized for high-efficiency power conversion

Enables high-voltage, high-power system designs

Suitable for high-frequency, high-efficiency switching applications

Key Technical Parameters

Drain-Source Voltage (VDS): 600 V

Gate-Source Voltage (VGS): ±30 V

On-Resistance (RDS(on)): 195 mΩ max

Drain Current (ID): 19 A continuous at 25°C

Input Capacitance (Ciss): 1080 pF max

Power Dissipation (PD): 156 W at 25°C

Quality and Safety Features

RoHS3 compliant

Designed for high-reliability and safety-critical applications

Compatibility

Suitable for a wide range of high-voltage, high-current power conversion and motor drive applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Industrial and consumer electronics

Product Lifecycle

This product is an active, long-term available solution.

Replacements and upgrades are regularly available from Vishay/Siliconix.

Key Reasons to Choose This Product

Excellent efficiency and power density enabled by low on-resistance

Robust high-voltage, high-current capability for demanding applications

Fast switching speed and low gate charge for high-frequency operation

Proven reliability and safety features for critical system designs

Broad compatibility and availability for long-term design flexibility