Manufacturer Part Number
FQN1N60CTA
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Transistors - FETs, MOSFETs - Single
Product Features and Performance
TO-92-3 package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 300mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Through Hole Mounting Type
Product Advantages
High voltage capability
Low on-resistance
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Current Continuous Drain (Id) @ 25°C: 300mA (Tc)
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Quality and Safety Features
Designed and manufactured to high quality standards
Meets safety requirements for the intended applications
Compatibility
Suitable for a wide range of electronic circuit designs
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Consumer electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
High voltage capability up to 600 V
Low on-resistance for efficient power switching
Suitable for a variety of applications in industrial, consumer, and automotive domains
Designed and manufactured to high quality standards for reliable performance
Availability of replacement or upgrade options to support product lifecycle management