SI7461DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7461DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Single P-Channel TrenchFET MOSFET with low on-resistance and enhanced body diode

Product Features and Performance

Low on-resistance of 14.5 mΩ

High current rating of 8.6 A

High drain-source voltage of 60 V

Wide operating temperature range of -55°C to 150°C

Low gate charge of 190 nC

Enhanced body diode performance

Product Advantages

Excellent power efficiency

Compact surface-mount package

Suitable for high-current, high-voltage applications

Reliable operation across wide temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 60 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 14.5 mΩ

Continuous Drain Current (Id): 8.6 A

Power Dissipation (Pd): 1.9 W

Gate Charge (Qg): 190 nC

Quality and Safety Features

RoHS3 compliant

Suitable for harsh environments

Compatibility

Compatible with various high-power, high-voltage applications

Application Areas

Switch-mode power supplies

Automotive electronics

Industrial control systems

Telecommunications equipment

Product Lifecycle

Currently in production

No immediate plans for discontinuation

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Industry-leading low on-resistance

Reliable operation in wide temperature range

Compact and easy-to-use surface-mount package

Suitable for high-current, high-voltage applications