Manufacturer Part Number
SI7463DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel MOSFET transistor
Part of the TrenchFET series
Product Features and Performance
40V Drain-Source Voltage
-55°C to 150°C Operating Temperature
2mΩ On-Resistance @ 18.6A, 10V
11A Continuous Drain Current @ 25°C
9W Power Dissipation
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Wide operating temperature range
Compact PowerPAK SO-8 package
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
±20V Gate-Source Voltage
3V Gate Threshold Voltage @ 250A
140nC Gate Charge @ 10V
Quality and Safety Features
RoHS3 Compliant
Surface Mount Mounting
Compatibility
Suitable for a variety of power management and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Product Lifecycle
Current product, no discontinuation planned
Replacement parts and upgrades available
Key Reasons to Choose
High performance and efficiency
Robust design for wide temperature range
Compact size and easy surface mount integration
Proven reliability from Vishay/Siliconix