Manufacturer Part Number
SI7464DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
200V Drain-to-Source Voltage
8A Continuous Drain Current
240mΩ On-Resistance
Wide Operating Temperature Range (-55°C to 150°C)
Product Advantages
High power density
Low on-resistance
Fast switching speed
Reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 240mΩ @ 2.8A, 10V
Continuous Drain Current (Id): 1.8A
Power Dissipation: 1.8W
Gate Charge (Qg): 18nC @ 10V
Quality and Safety Features
RoHS3 compliant
PowerPAK SO-8 package
Compatibility
Surface mount
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
General-purpose switching
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and power density
Low on-resistance for reduced power loss
Wide operating temperature range
Reliable and robust performance
Compatibility with surface mount applications