SI7465DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7465DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

P-channel enhancement-mode MOSFET with trench technology, designed for power management and load switching applications.

Product Features and Performance

Low on-resistance of 64 mOhm at 5A and 10V

Continuous drain current of 3.2A at 25°C

Maximum power dissipation of 1.5W at 25°C

Wide operating temperature range of -55°C to 150°C

Trench technology for improved performance and reliability

Available in the PowerPAK SO-8 package

Product Advantages

Efficient power management

Reliable and durable performance

Compact and space-saving package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

Threshold Voltage (Vgs(th)): 3V at 250μA

Gate Charge (Qg): 40nC at 10V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for a wide range of power management and load switching applications

Application Areas

Power management circuits

Load switching

Motor control

Automotive electronics

Product Lifecycle

This product is currently in production and actively supported by the manufacturer.

Replacement or upgrade options may be available, but the specific details would need to be checked with the manufacturer.

Several Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Reliable and durable performance over a wide temperature range

Compact and space-saving package

Suitable for a variety of power management and switching applications

RoHS3 compliance and AEC-Q101 automotive qualification for high-quality and safety-critical use cases