Manufacturer Part Number
SI7460DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET in a PowerPAK SO-8 package
Product Features and Performance
Trench technology for low on-resistance and high-frequency operation
Low gate charge for high-speed switching
Low Vgs(th) for logic-level gate drive
Rugged and reliable design with low gate-source leakage
Product Advantages
Efficient power conversion and control
High switching speed and low switching losses
Suitability for high-frequency applications
Robust and reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 60 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 9.6 mΩ @ 18 A, 10 V
Continuous Drain Current (Id): 11 A @ 25°C
Power Dissipation (Pd): 1.9 W @ 25°C
Gate Charge (Qg): 100 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long lifespan
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Inverters and converters
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance in high-frequency, high-power applications
Efficient power conversion with low switching losses
Reliable and robust design for long-term use
Compatibility with a variety of power electronics systems
SI7461DPVishay