MJD31C-13 - Diodes Incorporated

Manufacturer Part Number

MJD31C-13

Manufacturer

Diodes Incorporated

Introduction

The MJD31C-13 is a high-voltage, high-current NPN bipolar junction transistor (BJT) from Diodes Incorporated.

Product Features and Performance

High voltage rating of 100V

High current handling capability up to 3A

Transition frequency of 3MHz

Low saturation voltage of 1.2V @ 375mA, 3A

Product Advantages

Suitable for high-power switching and amplification applications

Robust design with high thermal and mechanical reliability

RoHS compliant for environmentally friendly use

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 100V

Collector Current (Max): 3A

Collector Cutoff Current (Max): 1A

DC Current Gain (Min): 10 @ 3A, 4V

Transition Frequency: 3MHz

Quality and Safety Features

RoHS3 compliant

Housed in the rugged TO-252 (D-Pak) package

Compatibility

Can be used as a direct replacement for various high-power NPN transistors in similar packages

Application Areas

High-power switching circuits

Amplifiers

Power supplies

Motor control

Industrial electronics

Product Lifecycle

This product is currently in production and widely available

No plans for discontinuation or end-of-life in the near future

Replacement or upgrade options may be available from Diodes Incorporated or other manufacturers

Key Reasons to Choose This Product

Excellent performance and reliability for high-power applications

Wide operating temperature range of -55°C to 150°C

RoHS compliance for environmentally friendly use

Robust TO-252 package for mechanical and thermal stability

Suitable as a replacement for various high-power NPN transistors