MJD3055T4 - onsemi

Manufacturer Part Number

MJD3055T4

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN silicon power transistor

Product Features and Performance

Optimized for high-power switching and amplifier applications

Capable of handling up to 20W of power

Wide operating temperature range of -55°C to 150°C

High collector-emitter breakdown voltage of 60V

High collector current rating of up to 10A

High collector cutoff current of up to 50A

Low saturation voltage of 1.1V @ 4A collector current

High DC current gain of minimum 20 @ 4A, 4V

Product Advantages

Robust and reliable performance

Efficient power handling

Suitable for high-power applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 60V

Current Collector (Ic) (Max): 10A

Current Collector Cutoff (Max): 50A

Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A

DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V

Frequency Transition: 2MHz

Quality and Safety Features

RoHS non-compliant

DPAK package for efficient heat dissipation

Suitable for surface mount assembly

Compatibility

Compatible with a wide range of high-power electronic applications

Application Areas

Switching power supplies

Motor drives

Industrial controls

Audio amplifiers

Automotive electronics

Product Lifecycle

This product is still in active production and availability is good.

Replacement or upgrade options may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Robust and reliable high-power performance

Efficient power handling capabilities

Wide operating temperature range for versatile applications

Low saturation voltage for improved efficiency

High current and voltage ratings enable use in demanding circuits

Surface mount packaging for easier integration