MJD3055TF - onsemi

Manufacturer Part Number

MJD3055TF

Manufacturer

onsemi

Introduction

The MJD3055TF is a high-performance, high-current NPN bipolar junction transistor (BJT) designed for use in a variety of power switching and amplification applications.

Product Features and Performance

Robust power handling capability with a maximum collector current of 10A

High current gain (hFE) of at least 20 at 4A, 4V

Low collector-emitter saturation voltage (VCE(sat)) of 8V at 3.3A, 10A

Wide voltage rating of up to 60V collector-emitter breakdown voltage

High operating temperature range up to 150°C junction temperature

High frequency performance with a transition frequency of 2MHz

Product Advantages

Efficient power switching and amplification

Compact and space-saving D-Pak surface mount package

Reliable operation in high-power, high-temperature applications

Key Technical Parameters

Maximum Collector Current (IC): 10A

Collector-Emitter Breakdown Voltage (VCEO): 60V

Collector-Emitter Saturation Voltage (VCE(sat)): 8V @ 3.3A, 10A

DC Current Gain (hFE): 20 min @ 4A, 4V

Transition Frequency (fT): 2MHz

Quality and Safety Features

Designed and manufactured to high quality standards

Meets relevant safety and environmental regulations

Compatibility

Can be used as a replacement or upgrade for a variety of power transistor applications

Application Areas

Power supplies

Motor drives

Switching regulators

Amplifiers

Industrial controls

Product Lifecycle

The MJD3055TF is an active and widely available product, with no indication of near-term discontinuation.

Replacements and upgrades are readily available from onsemi and other manufacturers.

Key Reasons to Choose this Product

Excellent power handling and efficiency

Compact and space-saving package

Reliable high-temperature operation

Wide voltage and current ratings

High-frequency performance

Widely available and actively supported