MJD3055T4 - STMicroelectronics

Manufacturer Part Number

MJD3055T4

Manufacturer

STMicroelectronics

Introduction

High-power NPN bipolar junction transistor (BJT) for high-frequency and high-current switching applications.

Product Features and Performance

High power handling capability up to 20W

High collector current up to 10A

High collector-emitter breakdown voltage up to 60V

High current gain (hFE) up to 20 at 4A, 4V

High switching frequency up to 2MHz

Surface mount DPAK package for efficient thermal management

Product Advantages

Reliable high-power switching performance

Efficient heat dissipation in compact DPAK package

Suitable for a wide range of high-frequency, high-current applications

Key Technical Parameters

Operating temperature up to 150°C

Collector-emitter breakdown voltage: 60V

Collector current (max): 10A

Collector cutoff current (max): 50A

VCE saturation voltage: 8V @ 3.3A, 10A

Current gain (hFE): 20 min. @ 4A, 4V

Transition frequency: 2MHz

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Compatible with a variety of high-power, high-frequency electronic circuits and systems

Application Areas

Switch-mode power supplies

Motor drives

Inductive load switching

Industrial and automotive electronics

Product Lifecycle

Current production, no plans for discontinuation

Replacement or upgrade options available from STMicroelectronics

Key Reasons to Choose

Reliable high-power switching performance

Efficient thermal management in compact DPAK package

Suitable for a wide range of high-frequency, high-current applications

RoHS3 compliance for environmental responsibility

Availability of replacement and upgrade options