Manufacturer Part Number
MJD3055T4G
Manufacturer
onsemi
Introduction
The MJD3055T4G is a high-power NPN bipolar junction transistor (BJT) designed for use in a variety of power conversion and control applications.
Product Features and Performance
High collector current rating of 10A
High collector-emitter breakdown voltage of 60V
Low collector-emitter saturation voltage of 8V @ 10A
Wide operating temperature range of -55°C to 150°C
High DC current gain of 20 min. @ 4A, 4V
High transition frequency of 2MHz
Product Advantages
Ideal for high-power switching and amplification applications
Robust and reliable performance
Compact surface-mount DPAK package
Key Technical Parameters
Power Rating: 1.75W
Collector-Emitter Voltage: 60V
Collector Current: 10A
Collector Cutoff Current: 50A
DC Current Gain: 20 min. @ 4A, 4V
Transition Frequency: 2MHz
Quality and Safety Features
RoHS3 compliant
DPAK surface-mount package for reliable operation
Compatibility
This transistor is compatible with a wide range of power electronics and control applications.
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General-purpose power amplification
Product Lifecycle
The MJD3055T4G is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High-power handling capability
Excellent electrical performance characteristics
Robust and reliable design
Compact surface-mount package
Wide operating temperature range
Compatibility with a variety of power electronics applications