MJD31C1G - onsemi

Manufacturer Part Number

MJD31C1G

Manufacturer

onsemi

Introduction

A high-power NPN bipolar junction transistor (BJT) for general-purpose applications.

Product Features and Performance

Wide operating temperature range (-65°C to 150°C)

High power handling capacity (1.56W)

High voltage rating (100V VCEO)

High collector current (3A max)

High collector cutoff current (50A max)

Low collector-emitter saturation voltage (1.2V @ 3A, 375mA)

Moderate current gain (10 min @ 3A, 4V)

Moderate transition frequency (3MHz)

Product Advantages

Robust and reliable performance

Suitable for high-power applications

Compact TO-251-3 short leads package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 100V

Collector Current (IC): 3A

Collector Cutoff Current (ICBO): 50A

Collector-Emitter Saturation Voltage (VCE(sat)): 1.2V

Current Gain (hFE): 10 min

Transition Frequency (fT): 3MHz

Quality and Safety Features

RoHS3 compliant

I-PAK packaging for reliable through-hole mounting

Compatibility

Suitable for a wide range of general-purpose high-power applications

Application Areas

Switching and amplifying circuits

Power supplies

Motor control

Industrial equipment

Product Lifecycle

No information on discontinuation or replacements

Several Key Reasons to Choose This Product

Robust and reliable performance for high-power applications

Compact and easy-to-mount package

Broad operating temperature range

Suitable for a wide range of general-purpose applications