MJD31CITU - onsemi

Manufacturer Part Number

MJD31CITU

Manufacturer

onsemi

Introduction

High-performance bipolar junction transistor (BJT) in the I-PAK package.

Product Features and Performance

Operating temperature up to 150°C

Power dissipation of 1.56 W

Collector-emitter breakdown voltage of 100 V

Collector current up to 3 A

Collector cutoff current up to 50 A

Low saturation voltage of 1.2 V at 3 A collector current

Transition frequency of 3 MHz

High DC current gain of 10 at 3 A collector current

Product Advantages

Robust I-PAK package for improved thermal performance

High-power handling capability

Suitable for a wide range of switching and amplification applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100 V

Current Collector (Ic) (Max): 3 A

Current Collector Cutoff (Max): 50 A

Vce Saturation (Max) @ Ib, Ic: 1.2 V @ 375 mA, 3 A

DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3 A, 4 V

Frequency Transition: 3 MHz

Quality and Safety Features

Designed and manufactured to high quality standards

Suitable for use in safety-critical applications

Compatibility

Through-hole mounting for easy integration into various circuit designs

Application Areas

Switching and amplification circuits

Power supplies

Motor controls

Industrial equipment

Product Lifecycle

This product is an active and widely available device from onsemi.

Replacement or upgraded options may become available in the future as technology evolves.

Key Reasons to Choose This Product

Robust I-PAK package for improved thermal performance

High power handling capability up to 1.56 W

Wide operating voltage range up to 100 V

High collector current up to 3 A

Low saturation voltage for efficient operation

High transition frequency of 3 MHz for high-speed applications

Suitable for a wide range of switching and amplification applications in industrial, power, and other electronic systems.