MJD31CT4 - STMicroelectronics

Manufacturer Part Number

MJD31CT4

Manufacturer

STMicroelectronics

Introduction

The MJD31CT4 is a high-power, high-voltage NPN bipolar junction transistor (BJT) designed for use in power electronics and industrial applications.

Product Features and Performance

High power handling capability up to 15W

High voltage rating up to 100V

High current capability up to 3A collector current

Low VCE(sat) of 1.2V @ 3A collector current

Wide operating temperature range up to 150°C

Optimized for high-speed switching applications

Product Advantages

Robust and reliable performance

Efficient power conversion and control

Suitable for various power electronics circuits

Compact DPAK surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 100V

Collector Current (IC): 3A

Power Dissipation (PD): 15W

Current Gain (hFE): 10 min. @ 3A, 4V

Collector-Emitter Saturation Voltage (VCE(sat)): 1.2V @ 375mA, 3A

Quality and Safety Features

RoHS3 compliant

Reliability and quality assured by STMicroelectronics

Compatibility

The MJD31CT4 is compatible with various power electronics applications and can be used as a replacement or upgrade for similar transistors.

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Industrial control systems

Product Lifecycle

The MJD31CT4 is an actively supported product by STMicroelectronics and is not nearing discontinuation. Replacement or upgrade options may be available.

Key Reasons to Choose This Product

High power handling capability

Excellent switching performance

Robust and reliable design

Compact and space-efficient DPAK package

Wide operating temperature range

RoHS3 compliance for environmental considerations