MJD31CT4-A - STMicroelectronics

Manufacturer Part Number

MJD31CT4-A

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Bipolar Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

DPAK Package

Operating Temperature: 150°C (TJ)

Power Rating: 15W

Collector-Emitter Breakdown Voltage: 100V

Collector Current: 3A (Max)

Collector Cutoff Current: 50A (Max)

Collector-Emitter Saturation Voltage: 1.2V @ 375mA, 3A

DC Current Gain (hFE): 10 (Min) @ 3A, 4V

Surface Mount Mounting

Product Advantages

Reliable performance in high-power applications

Compact DPAK package for efficient space utilization

Wide operating temperature range up to 150°C

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 3A

Current Collector Cutoff (Max): 50A

Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A

DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V

Quality and Safety Features

RoHS3 Compliant

Reliable performance in high-temperature environments

Compatibility

Compatible with various electronic circuits and power systems

Application Areas

Power supplies

Motor control

Lighting systems

Industrial electronics

Product Lifecycle

Current product, no information on discontinuation or replacements

Key Reasons to Choose

Reliable performance in high-power applications

Compact DPAK package for efficient space utilization

Wide operating temperature range up to 150°C

RoHS3 compliance for environmental sustainability