MJD31CT4G - onsemi

Manufacturer Part Number

MJD31CT4G

Manufacturer

onsemi

Introduction

The MJD31CT4G is a high-voltage, high-current NPN bipolar junction transistor (BJT) in a DPAK package. It is designed for use in a wide range of power electronics applications.

Product Features and Performance

High voltage rating of up to 100V

High current capability of up to 3A

High current gain (hFE) of 10 or more at 3A, 4V

Wide operating temperature range of -65°C to 150°C

Low collector-emitter saturation voltage (VCE(sat)) of 1.2V at 375mA, 3A

High transition frequency of 3MHz

Product Advantages

Efficient power handling

Reliable performance across temperature extremes

Compact DPAK surface-mount package

Suitable for a variety of power electronics applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 100V

Collector Current (IC): 3A

Collector Cutoff Current (ICBO): 50µA

DC Current Gain (hFE): 10 minimum at 3A, 4V

Transition Frequency (fT): 3MHz

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering in Tape & Reel packaging

Compatibility

Designed for use in a wide range of power electronics applications, including motor drives, switching power supplies, and power amplifiers.

Application Areas

Power electronics

Motor drives

Switching power supplies

Power amplifiers

Product Lifecycle

The MJD31CT4G is an active product, with no plans for discontinuation at this time.

Replacement or upgrade options may be available from onsemi, depending on evolving application requirements.

Key Reasons to Choose This Product

High voltage and current capabilities

Reliable performance across temperature extremes

Compact surface-mount packaging

Suitable for a variety of power electronics applications

RoHS3 compliance for environmentally-friendly use