MJD31T4G - onsemi

Manufacturer Part Number

MJD31T4G

Manufacturer

onsemi

Introduction

The MJD31T4G is a high-power NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for use in a variety of power switching and amplification applications.

Product Features and Performance

High power handling capability of up to 1.56 W

Voltage rating of up to 40 V between collector and emitter

Maximum collector current of 3 A

High DC current gain (hFE) of at least 10 at 3 A and 4 V

Transition frequency of up to 3 MHz

Wide operating temperature range of -65°C to 150°C

Product Advantages

Robust and reliable performance in high-power applications

Compact DPAK surface mount packaging for efficient thermal management

Suitable for a wide range of power electronics and control circuits

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 3 A

Collector Cutoff Current (Max): 50 A

Collector-Emitter Saturation Voltage (Max): 1.2 V @ 375 mA, 3 A

DC Current Gain (hFE) (Min): 10 @ 3 A, 4 V

Transition Frequency: 3 MHz

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Rigorous quality control and testing procedures

Compatibility

The MJD31T4G is a direct replacement for a variety of similar high-power NPN BJT transistors in power electronics and control circuits.

Application Areas

Power amplifiers

Motor drives

Switching power supplies

Industrial control systems

Automotive electronics

Product Lifecycle

The MJD31T4G is an active and widely available product from onsemi. There are no plans for discontinuation, and replacement or upgrade options are readily available.

Key Reasons to Choose This Product

Robust and reliable high-power performance

Efficient thermal management through compact DPAK packaging

Wide compatibility and suitability for diverse power electronics applications

Compliance with RoHS3 environmental regulations

Ongoing availability and support from a trusted manufacturer, onsemi