MJD31CT4 - onsemi

Manufacturer Part Number

MJD31CT4

Manufacturer

onsemi

Introduction

Power transistor for amplifier, switch, and driver applications

Product Features and Performance

NPN bipolar junction transistor (BJT)

Power rating of 15 W

Collector-emitter breakdown voltage of 100 V

Collector current up to 3 A

Collector cutoff current up to 50 A

Saturation voltage of 1.2 V at 3 A collector current

DC current gain of 10 at 3 A collector current

Transition frequency of 3 MHz

Product Advantages

Reliable performance in high-power applications

Compact DPAK surface-mount package

Suitable for a wide range of operating temperatures (-65°C to 150°C)

Key Technical Parameters

Collector-emitter breakdown voltage: 100 V

Collector current (max.): 3 A

Collector cutoff current (max.): 50 A

Saturation voltage: 1.2 V @ 3 A collector current

DC current gain: 10 @ 3 A collector current, 4 V collector-emitter voltage

Transition frequency: 3 MHz

Quality and Safety Features

RoHS non-compliant

Suitable for high-temperature and high-power applications

Compatibility

Compatible with a variety of amplifier, switch, and driver circuits

Application Areas

Amplifiers

Switches

Drivers

Power electronics

Product Lifecycle

The MJD31CT4 is an active product and not nearing discontinuation.

Replacement or upgrade options may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Reliable high-power performance

Wide operating temperature range

Compact surface-mount DPAK package

Suitable for a variety of power electronics applications