MJD31CRLG - onsemi

Manufacturer Part Number

MJD31CRLG

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN bipolar junction transistor (BJT)

Product Features and Performance

Capable of handling up to 100V collector-emitter voltage

Supports up to 3A of collector current

Transition frequency of 3MHz

Provides a minimum DC current gain (hFE) of 10 @ 3A, 4V

Product Advantages

Robust design for high-voltage, high-current applications

Suitable for use in power amplifiers, motor drives, and switching circuits

Surface mount DPAK package for compact assembly

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 3A

Current Collector Cutoff (Max): 50A

Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V

Frequency Transition: 3MHz

Quality and Safety Features

RoHS3 compliant

Suitable for operating temperatures from -65°C to 150°C

Compatibility

Surface mount DPAK package

Application Areas

Power amplifiers

Motor drives

Switching circuits

Industrial and automotive electronics

Product Lifecycle

Currently in active production

Replacement or upgrade options may be available, consult manufacturer

Key Reasons to Choose This Product

Robust high-voltage, high-current capabilities

Compact surface mount DPAK package

Suitable for a wide range of power electronics applications

Reliable performance within the specified operating temperature range