MJD3055G - onsemi

Manufacturer Part Number

MJD3055G

Manufacturer

onsemi

Introduction

High-power, high-voltage NPN bipolar power transistor

Product Features and Performance

Operating temperature range: -55°C to 150°C

Maximum power dissipation: 1.75 W

Collector-emitter breakdown voltage: 60 V

Collector current (max): 10 A

Collector cutoff current (max): 50 A

Collector-emitter saturation voltage: 8 V @ 3.3 A, 10 A

DC current gain (hFE): 20 @ 4 A, 4 V

Transition frequency: 2 MHz

Product Advantages

Robust and reliable performance

Efficient power handling

Wide operating temperature range

Suitable for high-current and high-voltage applications

Key Technical Parameters

Voltage rating

Current rating

Power dissipation

Frequency response

Gain characteristics

Quality and Safety Features

Stringent manufacturing standards

Thermal management design

Overcurrent and overvoltage protection

Compatibility

Suitable for a wide range of power electronics and control applications

Application Areas

Power amplifiers

Motor drives

Switching regulators

Industrial controls

Automotive electronics

Product Lifecycle

This product is an active and widely used component

Replacement or upgrade options are available from the manufacturer

Key Reasons to Choose This Product

Proven reliability and performance

Efficient power handling capabilities

Versatile in a wide range of applications

Readily available and well-supported by the manufacturer