MJD2955T4 - STMicroelectronics

Manufacturer Part Number

MJD2955T4

Manufacturer

STMicroelectronics

Introduction

High-power PNP bipolar junction transistor (BJT) in a surface-mount DPAK package.

Product Features and Performance

High power handling capability up to 20W

Wide collector-emitter breakdown voltage up to 60V

High collector current up to 10A

High collector current cutoff up to 50A

Low collector-emitter saturation voltage of 8V @ 10A

High DC current gain of 20 @ 4A, 4V

High transition frequency of 2MHz

Product Advantages

Robust and reliable performance

Efficient thermal management in DPAK package

Suitable for high-power switching and amplification applications

Key Technical Parameters

Power Dissipation: 20W

Collector-Emitter Breakdown Voltage: 60V

Collector Current: 10A

Collector Current Cutoff: 50A

Collector-Emitter Saturation Voltage: 8V @ 10A

DC Current Gain: 20 @ 4A, 4V

Transition Frequency: 2MHz

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation up to 150°C

Compatibility

Compatible with standard TO-252-3, DPAK (2 Leads + Tab), SC-63 package

Application Areas

High-power switching and amplification circuits

Power supplies, motor drives, and industrial controls

Product Lifecycle

Currently in production

Availability of replacements and upgrades from STMicroelectronics

Key Reasons to Choose This Product

Robust and reliable high-power performance

Efficient thermal management in compact DPAK package

Suitable for a wide range of high-power applications

Backed by the quality and reliability of STMicroelectronics