MJD2955T4 - onsemi

Manufacturer Part Number

MJD2955T4

Manufacturer

onsemi

Introduction

High Power Bipolar Junction Transistor (BJT)

Designed for high-power switching and amplifier applications

Product Features and Performance

High current handling capability up to 10A

High voltage rating of 60V

Low saturation voltage of 1.1V @ 4A, 400mA

Wide operating temperature range of -55°C to 150°C

High power handling up to 20W

High current gain (hFE) of 20 @ 4A, 4V

High transition frequency of 2MHz

Product Advantages

Excellent performance for high-power switching and amplifier applications

Reliable and robust design

Efficient heat dissipation in DPAK package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 60V

Collector Current (Max): 10A

Collector Cutoff Current (Max): 50A

VCE Saturation Voltage (Max): 1.1V @ 400mA, 4A

DC Current Gain (hFE) (Min): 20 @ 4A, 4V

Transition Frequency: 2MHz

Quality and Safety Features

RoHS non-compliant

DPAK package for efficient heat dissipation

Compatibility

Surface mount device

Suitable for a wide range of high-power electronic applications

Application Areas

High-power switching circuits

Power amplifiers

Motor control

Industrial and automotive electronics

Product Lifecycle

This product is an active and widely used device

Replacements and upgrades are available

Several Key Reasons to Choose This Product

Excellent performance for high-power applications

Wide operating temperature range and high power handling

Reliable and robust design with efficient heat dissipation

Suitable for a variety of high-power electronic applications