Manufacturer Part Number
MJD243T4G
Manufacturer
onsemi
Introduction
Bipolar Junction Transistor (BJT)
NPN transistor
Product Features and Performance
Power rating: 1.4W
Collector-Emitter Breakdown Voltage (VCEO): 100V
Collector Current (IC): 4A
Collector Cutoff Current (ICBO): 100nA
Collector-Emitter Saturation Voltage (VCE(sat)): 600mV @ 100mA, 1A
DC Current Gain (hFE): 40 @ 200mA, 1V
Transition Frequency (fT): 40MHz
Product Advantages
Suitable for high-power, high-voltage applications
Reliable and robust performance
Small package size for efficient space utilization
Key Technical Parameters
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature: -65°C to 150°C
RoHS3 Compliant
Quality and Safety Features
Compliance with RoHS3 directive
Reliable and durable construction
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Application Areas
Power amplifiers
Motor drives
Switching regulators
Industrial controls
Automotive electronics
Product Lifecycle
Current product, no discontinuation plans
Several Key Reasons to Choose This Product
High power handling capability
Excellent voltage and current ratings
Robust and reliable performance
Compact package for efficient space utilization
Compliance with RoHS3 directive for environmental responsibility