MJD243T4 - onsemi

Manufacturer Part Number

MJD243T4

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor (BJT) for general-purpose switching and amplification applications

Product Features and Performance

Wide voltage range up to 100V

High collector current capability up to 4A

Fast switching speed with 40MHz transition frequency

High current gain (hFE) of at least 40 at 200mA, 1V

Low saturation voltage (Vce(sat)) of 300mV at 50mA, 500mA

Product Advantages

Reliable and robust design for demanding applications

Suitable for both analog and digital circuits

Excellent thermal performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 4A

Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V

Frequency Transition: 40MHz

Quality and Safety Features

RoHS non-compliant

Qualified for industrial and automotive applications

Compatibility

Compatible with various electronic circuit designs and systems

Application Areas

General-purpose switching and amplification in analog and digital circuits

Suitable for power management, motor control, and other industrial applications

Product Lifecycle

This is an active product with no discontinuation plans

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

High voltage and current handling capabilities for demanding applications

Fast switching speed and high current gain for efficient circuit performance

Reliable and robust design for industrial and automotive use cases

Broad compatibility with various electronic systems and circuits