MJD210T4G - onsemi

Manufacturer Part Number

MJD210T4G

Manufacturer

onsemi

Introduction

The MJD210T4G is a high-performance PNP bipolar junction transistor (BJT) designed for a variety of power electronic applications.

Product Features and Performance

Operates in a wide temperature range of -65°C to 150°C

Capable of handling up to 1.4W of power

Supports a maximum collector-emitter voltage of 25V

Supports a maximum collector current of 5A

Exhibits a minimum DC current gain (hFE) of 45 at 2A and 1V

Achieves a transition frequency of 65MHz

Product Advantages

Robust and reliable performance in demanding applications

Efficient power handling capabilities

Compact and space-saving DPAK package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 25V

Collector Current (Max): 5A

Collector Cutoff Current (Max): 100nA

Collector-Emitter Saturation Voltage (Max): 1.8V @ 1A, 5A

Transistor Type: PNP

DC Current Gain (Min): 45 @ 2A, 1V

Transition Frequency: 65MHz

Quality and Safety Features

RoHS3 compliant

DPAK package for enhanced thermal and mechanical performance

Compatibility

The MJD210T4G is compatible with a wide range of power electronic circuits and systems.

Application Areas

Power supplies

Motor control

Switching circuits

Amplifier circuits

Product Lifecycle

The MJD210T4G is an active and readily available product. Replacements and upgrades may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

Robust and reliable performance in a wide temperature range

Efficient power handling capabilities for demanding applications

Compact and space-saving DPAK package

RoHS3 compliance for environmental friendliness

Compatibility with a wide range of power electronic circuits and systems