Manufacturer Part Number
MJD253T4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
ROHS3 Compliant
DPAK Packaging
Operating Temperature Range: -65°C to 150°C
Maximum Power: 1.4 W
Maximum Collector-Emitter Breakdown Voltage: 100 V
Maximum Collector Current: 4 A
Maximum Collector Cut-off Current: 100 nA
Maximum Collector-Emitter Saturation Voltage: 600 mV
Minimum DC Current Gain (hFE): 40
Transition Frequency: 40 MHz
Product Advantages
Compact DPAK surface mount package
Wide operating temperature range
High power handling capability
High voltage and current ratings
Key Technical Parameters
Transistor Type: PNP
Packaging: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Packaging Form: Tape & Reel (TR)
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
Active and available product
Replacements and upgrades may be available
Key Reasons to Choose
Compact and efficient DPAK package
Wide operating temperature range
High power, voltage, and current capabilities
Good frequency performance
RoHS3 compliance for environmental safety