Manufacturer Part Number
MJD2955T4G
Manufacturer
onsemi
Introduction
High-voltage, high-current PNP power transistor for use in a variety of power applications.
Product Features and Performance
High voltage rating up to 60V
High current handling capability up to 10A
High DC current gain (hFE) of at least 20 @ 4A, 4V
High frequency transition of 2MHz
Wide operating temperature range from -55°C to 150°C
Product Advantages
Robust and reliable performance
Efficient power handling
Compact DPAK surface mount package
Suitable for a wide range of power electronics applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 60V
Current Collector (Ic) (Max): 10A
Current Collector Cutoff (Max): 50A
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency Transition: 2MHz
Quality and Safety Features
RoHS3 compliant
DPAK package for enhanced thermal management
Compatibility
Surface mount DPAK package
Suitable for a variety of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Amplifiers
Industrial control systems
Product Lifecycle
This product is currently in active production and availability
No plans for discontinuation or end-of-life at this time
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent frequency performance
Robust and reliable design
Compact surface mount packaging
Broad range of power electronics applications