Manufacturer Part Number
DMN65D8LDW-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel Logic Level MOSFET
Product Features and Performance
60V Drain-Source Voltage
6Ω Maximum On-Resistance
180mA Continuous Drain Current
22pF Input Capacitance
87nC Gate Charge
Logic Level Gate
Product Advantages
Dual channel design
Low on-resistance
High drain current capability
Low gate charge
Logic level gate
Key Technical Parameters
Drain-Source Voltage: 60V
On-Resistance: 6Ω
Drain Current: 180mA
Input Capacitance: 22pF
Gate Charge: 0.87nC
Gate Threshold Voltage: 2V
Quality and Safety Features
RoHS3 compliant
Operates in -55°C to 150°C temperature range
300mW maximum power dissipation
Compatibility
Surface mount SOT-363 package
Application Areas
Portable electronics
Power management circuits
Switching applications
Logic level control
Product Lifecycle
Current production, no discontinuation announced
Key Reasons to Choose
Dual channel design for space-saving
Low on-resistance for efficient power switching
High drain current capability
Logic level gate for easy microcontroller interfacing
Small surface mount package
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